Taipei, Taiwan

Shao-Hsuan Kao

This inventor holds 1 USPTO granted patent and 1 published patent application. Top assignee: National Taiwan University. Active years: 2015.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Shao-Hsuan Kao. Retrieved from https://idiyas.com/inventor/shao-hsuan-kao

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 1 

% Patents Active = 100.0

Average Co-Inventor Count = 3.0

ph-index = 1


Company Filing History:


Years Active: 2015

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1 patent (USPTO):Explore Patents

Title: Innovations of Shao-Hsuan Kao in Fabrication Methods

Introduction

Shao-Hsuan Kao is a notable inventor based in Taipei, Taiwan. He has made significant contributions to the field of material science, particularly in the fabrication of interlayers for photoelectric devices. His innovative approach has the potential to enhance the efficiency and yield of these devices.

Latest Patents

Shao-Hsuan Kao holds a patent titled "Method for Fabricating an Interlayer." This invention focuses on a method for creating an interlayer PCBM that is resistant to dissolution in organic solvents. By decreasing the solubility of the interlayer through polymerization, he has developed a technique that allows for better control over the thickness of the interlayer. This advancement is crucial for improving the performance of photoelectric devices.

Career Highlights

Kao is affiliated with National Taiwan University, where he continues to engage in research and development. His work has garnered attention for its practical applications in the field of electronics and materials engineering.

Collaborations

Some of his notable coworkers include Ching-Fuh Lin and Kuei-Yu Cian, who contribute to the collaborative efforts in advancing research in their respective fields.

Conclusion

Shao-Hsuan Kao's innovative methods in fabricating interlayers represent a significant advancement in material science. His contributions are poised to impact the efficiency of photoelectric devices positively.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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