This inventor holds 1 USPTO granted patent and 1 EPO patent. Top assignee: Semiconductor Manufacturing International (Shanghai) Corporation. Active years: 2017.
Company Filing History:
Years Active: 2017
Title: Innovator Spotlight: Shanyue Mo
Introduction
Shanyue Mo is a renowned inventor based in Shanghai, China. He has made significant contributions to the field of semiconductor technology, specifically through his innovative designs that enhance the performance and reliability of integrated circuits (ICs).
Latest Patents
Mr. Mo holds a patent for a "High-voltage-tolerant pull-up resistor circuit". This invention provides an advanced pull-up resistor circuit for an IC, which includes a voltage source, a voltage output for delivering power, and a series configuration of two PMOS transistors. The first PMOS transistor is coupled to a control signal that regulates its pull-up function, while the second PMOS transistor is designed to control a bias voltage, preventing reverse current from flowing to the voltage source under conditions when the second voltage surpasses the first voltage.
Career Highlights
Currently, Shanyue Mo works at Semiconductor Manufacturing International Corporation (SMIC) in Shanghai, where he has been instrumental in developing innovative semiconductor solutions. His deep understanding of electronic components and circuits has positioned him as a valuable asset in the industry.
Collaborations
Throughout his career, Mr. Mo has collaborated with notable colleagues, including Kai Zhu and Yan Chen. These partnerships have led to impactful projects that push the boundaries of what is possible in semiconductor manufacturing.
Conclusion
Shanyue Mo exemplifies the spirit of innovation in technology. His patent portfolio not only showcases his inventive skills but also reflects his commitment to advancing the semiconductor industry. As he continues to work alongside dedicated professionals at SMIC, the potential for future innovations in high-voltage technology remains promising.