The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 25, 2017

Filed:

Nov. 19, 2014
Applicant:

Semiconductor Manufacturing International (Shanghai) Corporation, Shanghai, CN;

Inventors:

Kai Zhu, Shanghai, CN;

Jie Chen, Shanghai, CN;

Wenjun Weng, Shanghai, CN;

Shanyue Mo, Shanghai, CN;

Zhiguang Guo, Shanghai, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03K 19/003 (2006.01); H03K 19/0185 (2006.01);
U.S. Cl.
CPC ...
H03K 19/00315 (2013.01); H03K 19/018507 (2013.01);
Abstract

A pull-up resistor circuit is provided for an IC, including a voltage source, a voltage output for providing a first voltage to supply power for providing a second voltage for an input/output (I/O) port of the IC, a first PMOS transistor, a second PMOS transistor and a control signal generator. The first PMOS transistor and the second PMOS transistor are connected in series to provide pull-up resistance, where the first PMOS transistor is coupled to a first control signal to control a pull-up function of the pull-up resistor circuit in a normal mode. Further, the control signal generator is for generating a second control signal coupled to the second PMOS transistor to control a bias voltage of the pull-up resistor circuit to prevent a reverse current from the voltage output to the voltage source under a high-voltage-tolerant mode when the second voltage is higher than the first voltage.


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