Rehovot, Israel

Shani Gat

This inventor holds 1 USPTO granted patent. Top assignee: Applied Materials Israel Limited. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Shani Gat. Retrieved from https://idiyas.com/inventor/shani-gat-980byovy

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


Average Co-Inventor Count = 1.0


Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: Shani Gat - Innovator in Semiconductor Technology

Introduction

Shani Gat is a notable inventor based in Rehovot, Israel. He has made significant contributions to the field of semiconductor technology. His innovative work has led to the development of a patent that addresses critical challenges in this area.

Latest Patents

Shani Gat holds a patent titled "Systems and Methods for Registration Between Images Informative of One or More Semiconductor Specimens." This patent showcases his expertise in creating solutions that enhance the accuracy and efficiency of semiconductor specimen analysis. He has 1 patent to his name, reflecting his commitment to advancing technology.

Career Highlights

Shani Gat is currently employed at Applied Materials Israel Limited, a leading company in the semiconductor industry. His role involves working on cutting-edge technologies that drive innovation in semiconductor manufacturing. His contributions have been instrumental in the development of new methodologies that improve production processes.

Collaborations

Shani collaborates with talented professionals in his field, including his coworker Yan Avniel. Their partnership exemplifies the collaborative spirit that is essential for driving innovation in technology.

Conclusion

Shani Gat's work in semiconductor technology highlights his role as an inventor dedicated to advancing the industry. His patent and contributions at Applied Materials Israel Limited demonstrate his commitment to innovation and excellence.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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