Company Filing History:
4 out of 362 
3 out of 7 
1 out of 2 Years Active: 1996-2009
Title: Innovations by Inventor Shang-De Chang
Introduction
Shang-De Chang is a prominent inventor based in Fremont, CA (US). He has made significant contributions to the field of memory technology, holding a total of 8 patents. His work focuses on enhancing the efficiency and functionality of flash memory arrays.
Latest Patents
One of his latest patents is titled "Low voltage low capacitance flash memory array." This invention introduces a structure where separate programming and read bit lines are utilized. The programming bit line is dedicated to programming the floating gate transistors in the memory cells, while the read bit line is used solely for reading the state of a floating gate transistor in a selected memory cell. This innovative design allows for low voltage usage during both programming and operation, enabling the use of transistors with feature sizes smaller than 0.18 microns. Additionally, it eliminates the variable capacitances associated with prior art p-type flash memory structures. Another notable patent is the "Nonvolatile memory solution using single-poly pFlash technology." This invention features a single-poly two-transistor PMOS memory cell designed for multiple-time programming applications. It includes a PMOS floating gate transistor that shares a drain/source P+ diffusion region with a PMOS select gate transistor, all formed within a first n-well.
Career Highlights
Shang-De Chang has worked with several notable companies throughout his career, including Rohm GmbH and Chingis Technology Corporation. His experience in these organizations has contributed to his expertise in memory technology and innovation.
Collaborations
He has collaborated with several professionals in the field, including Edwin Chow and Jia-Hwang Chang. These collaborations have likely enriched his work and led to further advancements in his inventions.
Conclusion
Shang-De Chang's contributions to memory technology through his innovative patents demonstrate his significant impact on the industry. His work continues to influence the development of efficient memory solutions.