Location History:
- Vancouver, CA (1995 - 1996)
- Chandler, AZ (US) (2000 - 2017)
Company Filing History:
2 out of 1,732 
1 out of 10,317 
1 out of 261 
Years Active: 1995-2025
Title: Innovations of Inventor Shane R Johnson
Introduction
Shane R Johnson is a notable inventor based in Chandler, AZ (US). He holds a total of 7 patents that reflect his contributions to the field of semiconductor technology and molecular beam epitaxy.
Latest Patents
One of his latest patents is titled "Kinetic model for molecular beam epitaxy growth of III-V bismide alloys." This invention focuses on a growth model for Group III-Group V (III-V) alloys by molecular beam epitaxy (MBE). It is based on the kinetics of various processes such as adsorption, desorption, incorporation, anion exchange, anion-assisted removal, and surface droplet accumulation of Group V elements. The invention also provides methods to optimize MBE growth conditions to achieve a target III-V alloy composition. Another significant patent is "Optical device based on bismuth-containing III-V compound multilayer semiconductors." This patent describes optical devices that utilize bismuth-containing III-V compound semiconductor materials. The optical device features an optically active pseudomorphic superlattice formed on a substrate, which includes alternating InAsSb layers and InAsBi layers.
Career Highlights
Throughout his career, Shane has worked with various institutions, including Arizona State University. His work has significantly advanced the understanding and application of semiconductor materials in optical devices.
Collaborations
Shane has collaborated with notable individuals in his field, including J Thomas Tiedje and Christian Lavoie.
Conclusion
Shane R Johnson's innovative work in the field of semiconductor technology and molecular beam epitaxy has led to significant advancements and numerous patents. His contributions continue to influence the development of optical devices and semiconductor materials.