Shan Wan

Title: Innovations of Shan Wan: Pioneering Advances in I/O Driver and Charge Pump Modeling

Introduction

Shan Wan is an accomplished inventor based in Saratoga, CA, with a notable portfolio of three patents. His work primarily focuses on advancements in input/output driver modeling and charge pump technology, utilizing cutting-edge methodologies to enhance performance and efficiency.

Latest Patents

One of Shan Wan's latest patents is titled "C-PHY input/output driver modeling using artificial neural network and state space models." This innovation provides systems and methods for estimating the output current of an I/O driver based on a set of voltages present at its pins. By applying neural network models and state space models, the invention allows for accurate current estimations, significantly improving the functionality of I/O drivers.

Another significant patent is "Low-dropout regulator and charge pump modeling using frequency-domain fitting methods." This patent outlines computer-implemented systems for modeling a charge pump by determining the relationship between its output voltage and loading conditions. The invention employs frequency-domain analysis and a vector-fitting algorithm to synthesize a model that accurately represents the charge pump's impedance and performance.

Career Highlights

Shan Wan is currently employed at Ansys, Inc., where he contributes his expertise in modeling and simulation technologies. His innovative approaches have positioned him as a key player in the field, driving advancements that benefit various applications in electronics and engineering.

Collaborations

Shan collaborates with talented coworkers, including Deqi Zhu and Yi Cao, who share his commitment to innovation and excellence in their respective fields.

Conclusion

Shan Wan's contributions to the fields of I/O driver and charge pump modeling exemplify the spirit of innovation. His patents reflect a deep understanding of complex systems and a dedication to enhancing technology for future applications.