Pohang, South Korea

Seungwoo Yoon

This inventor holds 1 USPTO granted patent. Top assignees: Pohang University of Science and Technology Foundation, Samsung Electronics Ltd.. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Seungwoo Yoon. Retrieved from https://idiyas.com/inventor/seungwoo-yoon

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

Average Co-Inventor Count = 1.0

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Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: Seungwoo Yoon and Three-Dimensional Scene Modeling.

Introduction

Seungwoo Yoon is an inventor based in Pohang, South Korea. His work includes methods for determining illumination patterns and modeling three-dimensional scenes. His patent record includes 1 patent.

Latest Patents

Yoon is named on the patent “Method of Determining Illumination Pattern for Three-Dimensional Scene and Method and Apparatus for Modeling Three-Dimensional Scene.” The invention describes constructing a dataset from images of a three-dimensional object with known surface-normal information, then generating simulated images using virtual illumination patterns based on combinations of basis images. It uses photometric stereo to estimate surface normals from those simulations and trains a neural network to select an illumination pattern by comparing the estimated normals with the known normals.

Career Highlights

Yoon’s listed affiliations include Samsung Electronics Ltd. and the Pohang University of Science and Technology Foundation. His patent work connects computational imaging, neural-network training, and three-dimensional scene modeling.

Collaborations

His listed coworkers include Seung-Hwan Baek and Seokjun Choi.

Conclusion

Seungwoo Yoon’s patent describes a data-driven approach to selecting illumination patterns for three-dimensional scene modeling, reflecting his work in computational imaging and related technologies.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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