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For the Inventor, By the Inventor

Hwaseong, South Korea

Seungjun Bae

This inventor holds 22 USPTO granted patents and 6 published patent applications and 1 EPO patent, primarily in Semiconductor Memory Devices. Top assignee: Samsung Electronics Co., Ltd.. Active years: 2010-2025.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Seungjun Bae. Retrieved from https://idiyas.com/inventor/seungjun-bae

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 22 

% Patents Active = 90.9

 

Average Co-Inventor Count = 3.6

ph-index = 3

Forward Citations = 54(Granted Patents)


Location History:

  • Daejeon, KR (2010)
  • Daejeon-si, KR (2011)
  • Daegu, KR (2011)
  • Hwasung-si, KR (2020)
  • Hwaseong-si, KR (2011 - 2024)

Company Filing History:

goldMedal22 out of 132,108 
 
Samsung Electronics Co., Ltd.
 patents

Years Active: 2010-2025

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Areas of Expertise:
Semiconductor Memory Device
ZQ Calibration
Clock Frequency Adjustment
Data Signal Equalizer
NBTI Monitoring
Refresh Method
Internal Clock Signal
Phase Locked Loop
Output Circuit
High Speed Data Transmission
Integrated Circuit
Data Input Method
22 patents (USPTO):Explore Patents
1. 12483243 - Semiconductor memory device performing recursive ZQ calibration and calibration method thereof (2025-11-25),
2. 12394452 - ZQ calibration circuit for multiple interfaces (2025-08-19),
3. 12301236 - Equalizer for removing inter symbol interference of data signal by increasing pulse widths of logic low level and logic high level of data signal (2025-05-13),
4. 12154616 - Memory device and operation method thereof (2024-11-26),
5. 11862234 - Memory device and operation method thereof (2024-01-02),
6. 11195571 - Memory device and method with data input (2021-12-07),
7. 11056158 - Memory device and divided clock correction method thereof (2021-07-06),
8. 10969420 - Test circuits for monitoring NBTI or PBTI (2021-04-06),
9. 10777246 - Semiconductor memory device and detection clock pattern generating method thereof (2020-09-15),
10. 10734043 - Memory system for adjusting clock frequency (2020-08-04),
11. 10692561 - Semiconductor memory device, memory system, and refresh method thereof (2020-06-23),
12. 10666467 - Memory device and operation method thereof (2020-05-26),
13. 10593387 - Semiconductor memory device and detection clock pattern generating method thereof (2020-03-17),
14. 10453504 - Memory device and divided clock correction method thereof (2019-10-22),
15. 10236045 - Semiconductor memory device having detection clock patterns phase-inverted from each other and detection clock generating method thereof (2019-03-19),

Title: Innovations by Seungjun Bae: A Trailblazer in Memory Device Technology

Introduction

Seungjun Bae is an esteemed inventor located in Hwaseong-si, South Korea, recognized for his substantial contributions to memory device technology. With a remarkable portfolio of 19 patents, Bae has made significant strides in his field, particularly through developments at Samsung Electronics Co., Ltd.

Latest Patents

Among his latest innovations is the patent for a memory device and operation method. This invention introduces a memory device equipped with a first data line driver circuit that generates a first reference voltage set based on a first and second code associated with a first data line. It efficiently determines the bit values of input data received through the first data line, utilizing this reference voltage. A second data line driver circuit similarly implements a second reference voltage set. Crucially, these reference voltages are designed with a decision feedback equalization (DFE) technique aimed at minimizing bit errors caused by inter-symbol interference, showcasing Bae's commitment to enhancing data integrity in memory devices.

Career Highlights

Throughout his career, Seungjun Bae has established himself as a leading figure in memory technology innovations. His work at Samsung Electronics Co., Ltd. has not only contributed to the advancement of industry standards but also set new benchmarks for efficiency and reliability in memory devices.

Collaborations

Bae collaborates with several talented professionals, including Hye Jung Kwon and Sihong Kim, fostering an environment of creativity and innovation. These partnerships enhance the development of cutting-edge technology and reflect the collaborative spirit prevalent in the engineering community at Samsung.

Conclusion

Seungjun Bae continues to be an influential inventor in the realm of memory devices, with a strong portfolio of patents that underline his innovative prowess. His contributions are integral to the field, promising advancements that will shape the future of technology. As he progresses in his career, the impact of his work is sure to be felt far beyond the boundaries of his current projects.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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