Hwaseong, South Korea

Seungcheol Chae

This inventor holds 1 USPTO granted patent and 2 published patent applications. Top assignee: Samsung Electronics Co., Ltd.. Active years: 2025.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Seungcheol Chae. Retrieved from https://idiyas.com/inventor/seungcheol-chae

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 1 

% Patents Active = 100.0

Average Co-Inventor Count = 7.0

ph-index = 1


Company Filing History:


Years Active: 2025

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1 patent (USPTO):Explore Patents

Title: Seungcheol Chae: Innovator in Semiconductor Technology

Introduction

Seungcheol Chae is a notable inventor based in Hwaseong-si, South Korea. He has made significant contributions to the field of semiconductor technology, particularly through his innovative patent.

Latest Patents

Seungcheol Chae holds a patent for a "Wet etching method and method of fabricating semiconductor device by using the same." This patent describes a wet etching method that involves several steps, including providing a structure with an etching target film, performing a series of etching processes using different phosphoric acid concentrations, and ultimately fabricating a semiconductor device.

Career Highlights

Chae is currently employed at Samsung Electronics Co., Ltd., where he continues to push the boundaries of semiconductor technology. His work has been instrumental in advancing the methods used in the fabrication of semiconductor devices.

Collaborations

Seungcheol Chae collaborates with talented coworkers, including Taeheon Kim and Kyunghyun Kim. Their combined expertise contributes to the innovative environment at Samsung Electronics.

Conclusion

Seungcheol Chae's contributions to semiconductor technology through his patent and work at Samsung Electronics highlight his role as an influential inventor in the industry. His innovative methods are paving the way for advancements in semiconductor fabrication.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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