The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 23, 2025
Filed:
Jan. 11, 2023
Samsung Electronics Co., Ltd., Suwon-si, KR;
Taeheon Kim, Busan, KR;
Kyunghyun Kim, Seoul, KR;
Changsup Mun, Hwaseong-si, KR;
Junyoul Yang, Seoul, KR;
Sanghoon Jeong, Suwon-si, KR;
Yongsik Chung, Hwaseong-si, KR;
Seungcheol Chae, Hwaseong-si, KR;
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;
Abstract
A wet etching method includes: providing a structure including an etching target film into a process bath containing a first etching solution having a first phosphoric acid concentration; performing a first etching process for etching the etching target film with the first etching solution in the process bath; providing a second etching solution having a second phosphoric acid concentration different from the first phosphoric acid concentration by changing a phosphoric acid concentration in the first etching solution; performing a second etching process for etching the etching target film with the second etching solution in the process bath; providing a third etching solution having a third phosphoric acid concentration different from the first and second phosphoric acid concentrations by changing a phosphoric acid concentration in the second etching solution; and performing a third etching process for etching the etching target film with the third etching solution in the process bath.