Seoul, South Korea

Junyoul Yang

This inventor holds 1 USPTO granted patent and 1 published patent application. Top assignee: Samsung Electronics Co., Ltd.. Active years: 2025.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Junyoul Yang. Retrieved from https://idiyas.com/inventor/junyoul-yang

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 1 

% Patents Active = 100.0

Average Co-Inventor Count = 7.0

ph-index = 1


Company Filing History:


Years Active: 2025

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1 patent (USPTO):Explore Patents

Title: Junyoul Yang: Innovator in Semiconductor Technology

Introduction

Junyoul Yang is a prominent inventor based in Seoul, South Korea. He has made significant contributions to the field of semiconductor technology, particularly through his innovative patent.

Latest Patents

Junyoul Yang holds a patent for a "Wet etching method and method of fabricating semiconductor device by using the same." This patent describes a wet etching method that includes several steps: providing a structure with an etching target film into a process bath containing a first etching solution with a specific phosphoric acid concentration, performing a first etching process, and subsequently providing and utilizing second and third etching solutions with varying phosphoric acid concentrations. This method enhances the efficiency and effectiveness of semiconductor device fabrication.

Career Highlights

Junyoul Yang is currently employed at Samsung Electronics Co., Ltd., a leading company in the electronics and semiconductor industry. His work at Samsung has allowed him to be at the forefront of technological advancements in semiconductor manufacturing.

Collaborations

He collaborates with talented coworkers, including Taeheon Kim and Kyunghyun Kim, who contribute to the innovative environment at Samsung Electronics.

Conclusion

Junyoul Yang's contributions to semiconductor technology through his patent demonstrate his expertise and commitment to innovation in the field. His work continues to influence the development of advanced semiconductor devices.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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