Hwaseong-si, South Korea

Seung-Min Ryu

This inventor holds 2 USPTO granted patents. Top assignees: Adeka Corporation, Samsung Electronics Ltd.. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Seung-Min Ryu. Retrieved from https://idiyas.com/inventor/seung-min-ryu-sn3lg8nd

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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Average Co-Inventor Count = 10.0


Company Filing History:


Years Active: 2026

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2 patents (USPTO):Explore Patents

Title: Seung-Min Ryu: Innovator in Thin Film Technology

Introduction

Seung-Min Ryu is a notable inventor based in Hwaseong-si, South Korea. He has made significant contributions to the field of materials science, particularly in the fabrication of thin films. His innovative work has led to advancements that improve both quality and productivity in this area.

Latest Patents

Seung-Min Ryu holds a patent for "Materials for fabricating thin films, methods of fabricating thin films using the same, and equipment for fabricating thin films using the same." This patent focuses on materials that enhance the quality and productivity of thin films. The materials include a Group 5 element precursor and various alkyl groups, which are essential for the fabrication process.

Career Highlights

Throughout his career, Seung-Min Ryu has worked with prominent companies such as Samsung Electronics Ltd. and Adeka Corporation. His experience in these organizations has allowed him to develop and refine his expertise in thin film technology.

Collaborations

Seung-Min Ryu has collaborated with talented individuals in his field, including Gyu-Hee Park and Youn Joung Cho. These collaborations have contributed to the advancement of his research and innovations.

Conclusion

Seung-Min Ryu is a distinguished inventor whose work in thin film technology has made a lasting impact. His innovative materials and methods continue to influence the industry, showcasing his dedication to advancing technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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