Pyeongchang, South Korea

Seung Jun Shin

This inventor holds 1 USPTO granted patent and 1 published patent application. Top assignee: Nanochips, Inc.. Active years: 2012.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Seung Jun Shin. Retrieved from https://idiyas.com/inventor/seung-jun-shin-xtjr16v9

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 1 

% Patents Active = 100.0

Average Co-Inventor Count = 2.0

ph-index = 1

Forward Citations = 3(Granted Patents)


Company Filing History:


Years Active: 2012

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1 patent (USPTO):Explore Patents

Title: Seung Jun Shin: Innovator in Single Electron Transistor Technology

Introduction

Seung Jun Shin is a notable inventor based in Pyeongchang-gun, South Korea. He has made significant contributions to the field of electronics, particularly in the development of single-electron transistors. His innovative work has the potential to advance the capabilities of electronic devices.

Latest Patents

Seung Jun Shin holds a patent for a "Single electron transistor operating at room temperature and manufacturing method for same." This invention relates to a single-electron transistor (SET) that operates effectively at room temperature. The technology minimizes the influence of gate voltage on tunneling barriers and allows for effective control of the electric potential of a quantum dot (QD). The design incorporates a trenched nano-wire structure to form the quantum dot and a gate that wraps around most of the quantum dot.

Career Highlights

Seung Jun Shin is currently employed at Nanochips, Inc., where he continues to work on innovative electronic solutions. His expertise in single-electron transistors positions him as a key player in the advancement of quantum dot technology.

Collaborations

Seung Jun Shin collaborates with Jung Bum Choi, contributing to the development of cutting-edge technologies in their field.

Conclusion

Seung Jun Shin's work in single-electron transistors represents a significant advancement in electronic technology. His innovative approach and dedication to research continue to influence the industry positively.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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