The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 17, 2012
Filed:
Sep. 01, 2010
Applicants:
Jung Bum Choi, Cheongju-si, KR;
Seung Jun Shin, Pyeongchang-gun, KR;
Inventors:
Jung Bum Choi, Cheongju-si, KR;
Seung Jun Shin, Pyeongchang-gun, KR;
Assignee:
Nanochips, Inc., Cheongju-si, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 21/44 (2006.01); H01L 21/84 (2006.01);
U.S. Cl.
CPC ...
Abstract
The present invention relates to a single-electron transistor (SET) operating at room temperature and a method of manufacturing the same, and to be specific, to a single-electron transistor operating at room temperature and a method of manufacturing the same, which are capable of minimizing influence of the gate voltage on tunneling barriers and effectively controlling the electric potential of a quantum dot (QD), by forming the quantum dot using a trenched nano-wire structure and forming the gate to wrap most of the way around the quantum dot.