Seoul, South Korea

Seung-Joo Yoo

This inventor holds 1 USPTO granted patent. Top assignee: Samsung Electronics Co., Ltd.. Active years: 2011.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Seung-Joo Yoo. Retrieved from https://idiyas.com/inventor/seung-joo-yoo

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 5.0

ph-index = 1

Forward Citations = 2(Granted Patents)


Company Filing History:


Years Active: 2011

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1 patent (USPTO):Explore Patents

Title: Seung-Joo Yoo: Innovator in Semiconductor Manufacturing

Introduction

Seung-Joo Yoo is a prominent inventor based in Seoul, South Korea. He has made significant contributions to the field of semiconductor manufacturing, showcasing his expertise through innovative patent developments.

Latest Patents

One of his notable patents is titled "Methods of manufacturing a semiconductor device using a layer suspended across a trench." This patent outlines a method for forming a trench by creating patterns on a substrate, which are then etched to form trenches of varying depths. The process involves the use of a sacrificial layer to enhance the trench formation, ultimately leading to improved semiconductor device manufacturing techniques. Seung-Joo Yoo holds 1 patent in this area.

Career Highlights

Seung-Joo Yoo is associated with Samsung Electronics Co., Ltd., a leading company in the technology sector. His work at Samsung has positioned him as a key player in advancing semiconductor technologies.

Collaborations

He has collaborated with notable colleagues, including Du-Hyun Cho and Jong-Heui Song, contributing to various projects within the semiconductor field.

Conclusion

Seung-Joo Yoo's innovative approaches to semiconductor manufacturing have established him as a valuable inventor in the industry. His contributions continue to influence advancements in technology and manufacturing processes.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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