Suwon, South Korea

Seung-Heong Lee

This inventor holds 1 USPTO granted patent. Top assignee: Samsung Electronics Co., Ltd.. Active years: 2015.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Seung-Heong Lee. Retrieved from https://idiyas.com/inventor/seung-heong-lee

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 6.0

ph-index = 1


Company Filing History:


Years Active: 2015

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1 patent (USPTO):Explore Patents

Title: Innovations by Seung-Heong Lee in Semiconductor Manufacturing

Introduction

Seung-Heong Lee is a notable inventor based in Suwon-si, South Korea. He has made significant contributions to the field of semiconductor manufacturing, particularly through his innovative patent related to plasma processing methods.

Latest Patents

One of his key patents is a plasma processing method of a semiconductor manufacturing apparatus. This invention focuses on minimizing the amount of impurities that adhere to the surface of a wafer during plasma processing. The method involves diffusing the plasma generated over the wafer after the desired process is completed, followed by the de-chucking of the wafer. This innovation is crucial for enhancing the quality and efficiency of semiconductor manufacturing.

Career Highlights

Seung-Heong Lee is currently employed at Samsung Electronics Co., Ltd., a leading company in the technology sector. His work at Samsung has allowed him to be at the forefront of semiconductor technology advancements.

Collaborations

He has collaborated with notable colleagues such as Hyun-Su Jun and Ki-Sang Kim, contributing to various projects that aim to improve semiconductor manufacturing processes.

Conclusion

Seung-Heong Lee's contributions to semiconductor manufacturing through his innovative patent demonstrate his expertise and commitment to advancing technology in this critical field. His work continues to influence the industry positively.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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