Seongnam, South Korea

Seung Han Ahn

This inventor holds 1 USPTO granted patent. Top assignee: Fidelix Co., Ltd.. Active years: 2016.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Seung Han Ahn. Retrieved from https://idiyas.com/inventor/seung-han-ahn-fyqf2u7u

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 100.0

Average Co-Inventor Count = 1.0

ph-index = 1


Company Filing History:


Years Active: 2016

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1 patent (USPTO):Explore Patents

Title: Innovations of Seung Han Ahn in Flash Memory Technology.

Introduction

Seung Han Ahn is a notable inventor based in Seongnam-si, South Korea. He has made significant contributions to the field of flash memory technology, particularly with his innovative designs aimed at enhancing device performance and reliability.

Latest Patents

Ahn holds a patent for a NOR-type flash memory device configured to reduce program malfunctions. This invention includes a memory array, row selection circuit, column selection circuit, and program driver circuit. The memory array features a memory sector with a first sector bit line and a second sector bit line. Additionally, it comprises a matrix structure of flash memory cells arranged with multiple cell bit lines and word lines. The design alternates between first and second cell bit lines, ensuring efficient connectivity and response to column selection signals.

Career Highlights

Seung Han Ahn is associated with Fidelix Co., Ltd., where he continues to develop and refine innovative memory solutions. His work focuses on addressing common issues in flash memory devices, thereby contributing to advancements in the technology sector.

Conclusion

Seung Han Ahn's contributions to flash memory technology exemplify the importance of innovation in enhancing device functionality and reliability. His patent reflects a commitment to solving critical challenges in the field, marking him as a significant figure in the realm of inventors.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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