Blacksberg, VA, United States of America

Seshu Babu Desu


Average Co-Inventor Count = 3.0

ph-index = 1

Forward Citations = 10(Granted Patents)


Company Filing History:


Years Active: 1998

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1 patent (USPTO):Explore Patents

Title: **Inventor Spotlight: Seshu Babu Desu**

Introduction

Seshu Babu Desu is an accomplished inventor based in Blacksburg, Virginia, United States. He has made significant contributions to the field of ferroelectric materials, specifically through his innovative work with capacitors. His expertise has paved the way for advancements in memory technology, including the development of ferroelectric random access memory (FRAM).

Latest Patents

Seshu Babu Desu holds a patent for a "Ferroelectric Capacitor with Rhodium Electrodes." This cutting-edge invention outlines a ferroelectric capacitor essential for use as a memory cell in FRAM. The design features a substrate with an insulating layer, a rhodium lower electrode insulated from an adhesive layer, and a ferroelectric layer on top. The application of rhodium as the electrode material offers distinct advantages, including resistance to silicon diffusion compared to traditional platinum electrodes, enhanced electrical properties, and superior heat transfer capabilities.

Career Highlights

Currently, Seshu Babu Desu is affiliated with Samsung Electronics Co., Ltd., a company renowned for its role in technological innovation and electronic products. His work has contributed to the development of advanced memory technologies, showcasing how innovative materials can enhance electronic device performance. His singular patent reflects his commitment to pushing the boundaries of electrical engineering and materials science.

Collaborations

Throughout his career, Seshu has collaborated with notable colleagues, including June-key Lee and Il-Sub Chung. These partnerships have fostered a collaborative environment wherein ideas are shared, leading to groundbreaking innovations in memory technology.

Conclusion

Seshu Babu Desu exemplifies the spirit of innovation in the field of electronics and materials science. His patented ferroelectric capacitor design demonstrates the vital interplay between material selection and electrical properties, marking a significant step forward in memory technology. As the industry continues to evolve, Desu's contributions will undoubtedly play a critical role in shaping the future of electronic device architecture.

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