Samsung Electronics Co., Ltd.

Seshu Babu Desu

June-key Lee

Il-Sub Chung

A ferroelectric capacitor used as a memory cell in a ferroelectric random access memory (FRAM) is provided. The ferroelectric capacitor includes a substrate, an insulating layer formed on the substrate, a Rh lower electrode provided on the insulating layer, an adhesive layer between the insulating layer and the lower electrode, a ferroelectric layer provided on the lower electrode, and a Rh upper electrode provided on the ferroelectric layer. The Rh used as the electrode material is not affected by diffusion of Si due to its fine structure when compared to a Pt electrode, and has excellent electrical properties due to better electrical conductivity and good heat-transfer properties.

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Blacksberg, VA, United States of America

Seshu Babu Desu