This inventor holds 1 USPTO granted patent. Top assignee: University of Massachusetts. Active years: 2000.
Company Filing History:
Years Active: 2000
Title: Innovations of Sergey Nabokin
Introduction
Sergey Nabokin is a notable inventor based in Lowell, MA (US). He has made significant contributions to the field of electronics, particularly in the development of multigate field effect transistors (FETs). His innovative approach has led to advancements that enhance the performance of these devices.
Latest Patents
One of Sergey Nabokin's key patents is titled "Tailored field in multigate FETS." This invention introduces a uniform tailored electrical field in a multigate field effect D-mode transistor. The design incorporates a feedback circuit that couples drain bias voltages to the gates of the multigate transistor. This configuration allows for incremental biasing of the gates, ensuring that the highest voltage is applied to the gate nearest the drain, while the lowest voltage is applied to the gate nearest the source. The proper distribution of gate voltages improves the transconductance G.sub.m of the transistor and decreases gate capacitance C.sub.gs, ultimately increasing the speed of operation of multigate FETs. Sergey holds 1 patent in this area.
Career Highlights
Sergey Nabokin is affiliated with the University of Massachusetts, where he continues to engage in research and development. His work focuses on enhancing the efficiency and performance of electronic components, particularly in the realm of transistors.
Collaborations
Some of his notable coworkers include Samson Kh Mil'shtein and Shixian Sui. Their collaborative efforts contribute to the advancement of technology in the field of electronics.
Conclusion
Sergey Nabokin's innovative work in multigate FETs exemplifies the impact of research and development in electronics. His contributions continue to influence the industry and pave the way for future advancements.