The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 14, 2000
Filed:
May. 08, 1998
Samson Mil'shtein, Chelmsford, MA (US);
Sergey Nabokin, Lowell, MA (US);
Shixian Sui, Lowell, MA (US);
University of Massachusetts Lowell, Lowell, MA (US);
Abstract
A uniform tailored electrical field in a multigate field effect D-mode transistor is automatically provided by a feedback circuit which couples drain bias voltages to the gates of a multigate transistor to bias the gates incrementally such that the highest voltage is applied to the gate nearest the drain while the lowest voltage is applied to the gate nearest the source. E-mode multigate FET's carry higher gate voltage on the gate close to the source compared to a gate voltage on a last gate, located close to the drain. The proper distribution of gate voltages improves the transconductance G.sub.m of the transistor and decreases gate capacitance C.sub.gs, which increases the speed of operation of a multigate FETs.