SePuan Yu

Title: The Innovative Contributions of SePuan Yu

Introduction

SePuan Yu is a notable inventor based in Schenectady, NY (US). He has made significant contributions to the field of semiconductor technology, particularly through his innovative patent related to silicon-on-sapphire field effect transistors.

Latest Patents

SePuan Yu holds a patent for a "Method of making silicon-on-sapphire FET." This invention involves junction and metal-semiconductor field effect transistors that utilize a sapphire substrate. The design aims to achieve isolation and reduced capacitance while incorporating a self-aligned gate to minimize source parasitic resistance. A lightly doped, opposite conductivity type region under the channel ensures that carriers flow near the silicon surface, where mobility is high. This region is consistently depleted by the P-N junction built-in voltage, acting as an insulator. These devices are essential for high-speed logic applications and serve as microwave amplifiers.

Career Highlights

SePuan Yu is currently employed at General Electric Company, where he continues to contribute to advancements in technology. His work has been instrumental in developing efficient semiconductor devices that enhance performance in various applications.

Collaborations

Throughout his career, SePuan Yu has collaborated with esteemed colleagues, including William R. Cady and John R. Eshbach. Their combined expertise has fostered innovation and progress in their respective fields.

Conclusion

SePuan Yu's contributions to semiconductor technology through his patent and work at General Electric Company highlight his role as a significant inventor. His innovative methods continue to influence high-speed logic applications and microwave amplification.