General Electric Company

SePuan Yu

William R Cady

John R Eshbach

Junction and metal-semiconductor field effect transistors have a sapphire substrate to realize isolation and reduced capacitance, and have a self-aligned gate to minimize source parasitic resistance. A lightly doped, opposite conductivity type region under the channel forces carriers to flow near the silicon surface where mobility is high; this region is depleted at all times by the P-N junction built-in voltage and acts as an insulator. These devices serve as switches in high speed logic applications and as microwave amplifiers.

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Schenectady, NY, United States of America

SePuan Yu