Seongui An

Title: Seongui An: Innovator in Non-Volatile Memory Technology

Introduction

Seongui An is a prominent inventor based in Ansan-si, South Korea. He has made significant contributions to the field of non-volatile memory devices. His innovative work focuses on enhancing memory technology, which is crucial for modern electronic devices.

Latest Patents

Seongui An holds a patent for a non-volatile memory device and its operating method. This invention includes a memory cell that features a write transistor and a ferroelectric read transistor. The design incorporates a write word line connected to the gate terminal of the write transistor, a write bit line linked to the source terminal of the write transistor, and a read word line connected to the source terminal of the ferroelectric read transistor. Additionally, the read bit line is connected to the drain terminal of the ferroelectric read transistor. The invention aims to implement a low-power, high-density, and non-destructive dynamic random access memory (DRAM) by realizing 2T0C FeDRAM based on a silicon complementary metal-oxide semiconductor (CMOS) process using a dielectric material. Seongui An has 1 patent to his name.

Career Highlights

Seongui An is associated with the Industry-University Cooperation Foundation at Hanyang University. His role in this institution allows him to bridge the gap between academic research and practical applications in the industry. His work is instrumental in advancing memory technology, which is vital for various electronic applications.

Collaborations

Seongui An has collaborated with notable colleagues, including Younghyun Kim and Taewon Jin. These partnerships enhance the research and development efforts in the field of memory technology.

Conclusion

Seongui An is a key figure in the development of non-volatile memory devices, contributing valuable innovations that impact the electronics industry. His work exemplifies the importance of research and collaboration in advancing technology.