Cheongju-si, South Korea

Seong-Do Jeon


Average Co-Inventor Count = 2.0

ph-index = 2

Forward Citations = 12(Granted Patents)


Location History:

  • Chungcheongbuk-do, KR (2011 - 2013)
  • Cheongju-si, KR (2012 - 2019)

Company Filing History:


Years Active: 2011-2019

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7 patents (USPTO):Explore Patents

Title: Seong-Do Jeon: Innovator in Nonvolatile Memory Technology

Introduction

Seong-Do Jeon is a prominent inventor based in Cheongju-si, South Korea. He has made significant contributions to the field of nonvolatile memory devices, holding a total of 7 patents. His work focuses on enhancing data reliability and efficiency in memory technology.

Latest Patents

Among his latest patents is the "Antifuse unit cell of nonvolatile memory device for enhancing data sense margin." This invention discloses a unit cell designed to improve reliability by enhancing the data sensing margin during read operations. The unit cell includes an antifuse with a first terminal positioned between an input terminal and an output terminal, along with a first switching unit connected to a ground voltage terminal. Another notable patent is the "OTP memory cell and fabricating method thereof," which presents a one-time programmable (OTP) memory cell. This cell features a well of a first conductivity type, a gate insulating layer with first and second fuse regions, and a gate electrode of a second conductivity type, among other components.

Career Highlights

Seong-Do Jeon is currently employed at Magnachip Semiconductor, Inc., where he continues to innovate in the semiconductor industry. His expertise in memory technology has positioned him as a key player in the development of advanced memory solutions.

Collaborations

He has collaborated with notable coworkers, including Chang-Hee Shin and Ki-Seok Cho, contributing to various projects that enhance the capabilities of nonvolatile memory devices.

Conclusion

Seong-Do Jeon's contributions to nonvolatile memory technology are significant and impactful. His innovative patents reflect his commitment to advancing the field and improving data reliability in memory devices.

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