The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 07, 2016
Filed:
Nov. 23, 2015
Applicant:
Magnachip Semiconductor, Ltd., Cheongju-si, KR;
Inventor:
Seong-do Jeon, Cheongju-si, KR;
Assignee:
MAGNACHIP SEMICONDUCTOR, LTD., Cheongju-si, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/762 (2006.01); H01L 27/112 (2006.01); G11C 17/16 (2006.01); H01L 29/423 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76224 (2013.01); H01L 27/11206 (2013.01); H01L 29/4238 (2013.01); H01L 29/42368 (2013.01); G11C 17/16 (2013.01);
Abstract
A one-time programmable (OTP) memory cell is provided, which includes: a well of a first conductivity type; a gate insulating layer formed on the well and including first and second fuse regions; a gate electrode of a second conductivity type formed on the gate insulating layer, the second conductivity type being opposite in electric charge to the first conductivity type; a junction region of the second conductivity type formed in the well and arranged to surround the first and second fuse regions; and an isolation layer formed in the well between the first fuse region and the second fuse region.