Pohang, South Korea

Seokjun Choi

This inventor holds 1 USPTO granted patent. Top assignees: Pohang University of Science and Technology Foundation, Samsung Electronics Ltd.. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Seokjun Choi. Retrieved from https://idiyas.com/inventor/seokjun-choi

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

Average Co-Inventor Count = 1.0

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Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: Seokjun Choi: Inventor in Three-Dimensional Scene Modeling

Introduction

Seokjun Choi is an inventor based in Pohang, South Korea. His work includes methods for determining illumination patterns and modeling three-dimensional scenes, combining photometric stereo techniques with neural-network training.

Latest Patents

Choi is associated with 1 patent: “Method of Determining Illumination Pattern for Three-Dimensional Scene and Method and Apparatus for Modeling Three-Dimensional Scene.”

The invention describes constructing a dataset from images of a three-dimensional object with known surface-normal information. It uses basis images to generate simulated images under virtual illumination patterns, then applies photometric stereo to estimate surface normals. A neural network is trained to determine an illumination pattern by comparing the estimated normals with the known surface normals.

Career Highlights

Choi’s professional affiliations include Samsung Electronics Ltd. and the Pohang University of Science and Technology Foundation. His patent work addresses computational methods for illumination and three-dimensional scene modeling.

Collaborations

Choi’s listed coworkers include Seung-Hwan Baek and Seungwoo Yoon.

Conclusion

Seokjun Choi’s patent reflects work at the intersection of computer vision, photometric stereo, and neural networks, with a focus on improving illumination-pattern selection for three-dimensional scene modeling.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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