Gyeonggi-do, South Korea

Seo Young Jang

This inventor holds 2 USPTO granted patents and 1 published patent application. Top assignee: Seoul National University. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Seo Young Jang. Retrieved from https://idiyas.com/inventor/seo-young-jang

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 2 

% Patents Active = 50.0

Average Co-Inventor Count = 3.0

ph-index = 1


Company Filing History:


Years Active: 2026

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2 patents (USPTO):Explore Patents

Title: Seo Young Jang: Innovator in Capacitorless 3D DRAM Technology

Introduction

Seo Young Jang is a notable inventor based in Gyeonggi-do, South Korea. He has made significant contributions to the field of semiconductor technology, particularly in the development of advanced memory devices. His innovative work has led to the filing of a patent that showcases his expertise and creativity in this area.

Latest Patents

Seo Young Jang holds a patent for a "Capacitorless 3D DRAM device and manufacturing method thereof." This invention includes a capacitorless 3D DRAM device featuring a write bit line and a read bit line that extend in vertical directions, along with corresponding word lines. The device is designed to enhance memory efficiency and performance, making it a significant advancement in the field of memory technology.

Career Highlights

Seo Young Jang is affiliated with Seoul National University, where he contributes to research and development in semiconductor technologies. His work is characterized by a focus on innovative solutions that address the challenges faced in modern memory devices.

Collaborations

Seo Young Jang collaborates with esteemed colleagues, including Cheol Seong Hwang and Sun Jin Lee. Their combined expertise fosters a productive research environment that drives innovation in their respective fields.

Conclusion

Seo Young Jang's contributions to the development of capacitorless 3D DRAM technology highlight his role as a leading inventor in the semiconductor industry. His work not only advances technology but also sets the stage for future innovations in memory devices.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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