Hiroshima, Japan

Seichiyou Makihira

This inventor holds 1 USPTO granted patent and 1 published patent application and 1 EPO patent. Top assignee: Toyo Advanced Technologies Co., Ltd.. Active years: 2015.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Seichiyou Makihira. Retrieved from https://idiyas.com/inventor/seichiyou-makihira

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 1 

 

Average Co-Inventor Count = 7.0

ph-index = 1


Company Filing History:


Years Active: 2015

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1 patent (USPTO):Explore Patents

Title: Seichiyou Makihira: Innovator in Implant Material Manufacturing

Introduction

Seichiyou Makihira is a notable inventor based in Hiroshima, Japan. He has made significant contributions to the field of implant materials, showcasing his innovative spirit through his patented methods.

Latest Patents

Makihira holds a patent for a "Method for manufacturing an implant material." This method involves preparing a base material for the implant, removing moisture from a chamber where the base material is placed, and introducing material gas as a carbon and silicon source into the chamber after moisture removal. This process results in the formation of a carbon thin film containing a C—C component and a SiC component on the surface of the base material through ionized deposition.

Career Highlights

Makihira is associated with Toyo Advanced Technologies Co., Ltd., where he continues to develop and refine his innovative techniques. His work has the potential to impact the medical field significantly, particularly in the area of implant technology.

Collaborations

He collaborates with talented coworkers, including Hiroki Nikawa and Yuichi Mine, who contribute to the advancement of their projects.

Conclusion

Seichiyou Makihira's work in the manufacturing of implant materials exemplifies the innovative spirit that drives advancements in medical technology. His contributions are paving the way for future developments in the field.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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