Mesa, AZ, United States of America

Sefaattin Tongay

This inventor holds 2 USPTO granted patents. Top assignee: University of Florida Research Foundation Inc.. Active years: 2014-2016.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Sefaattin Tongay. Retrieved from https://idiyas.com/inventor/sefaattin-tongay-xgm0u7kd

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 100.0

Average Co-Inventor Count = 2.0

ph-index = 1

Forward Citations = 6(Granted Patents)


Location History:

  • Albany, CA (US) (2014)
  • Mesa, AZ (US) (2016)

Company Filing History:


Years Active: 2014-2016

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2 patents (USPTO):Explore Patents

Title: Sefaattin Tongay: Innovator in Graphene Semiconductor Devices

Introduction

Sefaattin Tongay is a prominent inventor based in Mesa, AZ (US). He has made significant contributions to the field of semiconductor technology, particularly through his work with graphite and graphene materials. With a total of 2 patents, his innovations are paving the way for advancements in electronic devices.

Latest Patents

Sefaattin Tongay's latest patents focus on graphite and/or graphene semiconductor devices. Various embodiments are provided for these devices. In one embodiment, a semiconductor device includes a semiconductor layer and a semimetal stack. In another embodiment, the semiconductor device includes a semiconductor layer and a zero gap semiconductor layer. The semimetal stack or zero gap semiconductor layer is formed on the semiconductor layer, which creates a Schottky barrier. Additionally, another embodiment features first and second semiconductor layers along with a semimetal stack. The first semiconductor layer comprises a first semiconducting material, while the second semiconductor layer includes a second semiconducting material formed on the first layer. The semimetal stack or zero gap semiconductor layer is formed on the second semiconductor layer, which also forms a Schottky barrier.

Career Highlights

Sefaattin Tongay is affiliated with the University of Florida Research Foundation, Incorporated. His work has been instrumental in advancing the understanding and application of semiconductor technologies. His research has garnered attention for its innovative approach to utilizing graphene and graphite in electronic devices.

Collaborations

Sefaattin Tongay has collaborated with notable individuals in his field, including Arthur Foster Hebard. These collaborations have further enriched his research and contributed to the development of cutting-edge technologies.

Conclusion

Sefaattin Tongay is a key figure in the realm of semiconductor innovation, particularly with his work on graphene-based devices. His contributions are shaping the future of electronic technology and enhancing the capabilities of semiconductor applications.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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