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Sébastien Barasinski

This inventor holds 9 USPTO granted patents and 1 EPO patent. Top assignees: STMicroelectronics, Stmicroelectronics Gmbh. Active years: 2006-2012.

USPTO Granted Patents = 9

% Patents Active = 66.7

EPO Patents = 1

Average Co-Inventor Count = 2.6

ph-index = 2

Forward Citations = 14(Granted Patents)

Company Filing History:

Stmicroelectronics Gmbh

patents

where one patent can have more than one assignee

Years Active: 2006-2012

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9 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 8335121 - Method for implementing an SRAM memory information storage device (2012-12-18),

2. 8044728 - Circuit and method for measuring the performance parameters of transistors (2011-10-25),

3. 7795917 - High-speed buffer circuit, system and method (2010-09-14),

4. 7755927 - Memory device of SRAM type (2010-07-13),

5. 7751229 - SRAM memory device with improved write operation and method thereof (2010-07-06),

6. 7545686 - Device for setting up a write current in an MRAM type memory and memory comprising (2009-06-09),

7. 7372728 - Magnetic random access memory array having bit/word lines for shared write select and read operations (2008-05-13),

8. 7209383 - Magnetic random access memory array having bit/word lines for shared write select and read operations (2007-04-24),

9. 7139212 - Memory architecture with segmented writing lines (2006-11-21),

Title: The Innovations of Sébastien Barasinski

Introduction

Sébastien Barasinski is a notable inventor based in Meylan, France. He has made significant contributions to the field of memory storage and integrated circuits, holding a total of eight patents. His work reflects a deep understanding of electronic devices and their functionalities.

Latest Patents

One of his latest patents is a method for implementing an SRAM memory information storage device. This device is powered by a supply voltage and features an array of base cells organized in base columns, along with at least one mirror column of a mirror cell that simulates the behavior of the cells in a base column. The device includes emulation means in the mirror column, a means for varying the mirror power supply voltage, and a means for copying the mirror power supply voltage in the emulated base column.

Another significant patent involves a circuit and method for measuring the performance parameters of transistors. This integrated circuit includes an inverter with a first transistor of a first conductivity type and a second transistor of a second conductivity type connected in parallel. The inverter is capable of delivering an oscillating output signal, which is essential for various applications in electronics.

Career Highlights

Sébastien Barasinski has worked with prominent companies in the technology sector, including STMicroelectronics S.A. and STMicroelectronics GmbH. His experience in these organizations has allowed him to develop and refine his innovative ideas in the field of electronics.

Collaborations

Throughout his career, he has collaborated with notable professionals such as Cyrille Dray and Jean Lasseuguette. These collaborations have contributed to the advancement of his projects and innovations.

Conclusion

Sébastien Barasinski's contributions to the field of electronics through his patents and collaborations highlight his role as a significant inventor. His work continues to influence advancements in memory storage and integrated circuits.

Profile summary based on public USPTO records.

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