Company Filing History:
Years Active: 1999-2005
Title: Se-Jin Shim: Innovator in Integrated Circuit Capacitors
Introduction
Se-Jin Shim is a prominent inventor based in Seoul, South Korea. He has made significant contributions to the field of integrated circuit technology, holding a total of 7 patents. His work focuses on enhancing the performance and efficiency of capacitors used in electronic devices.
Latest Patents
One of Se-Jin Shim's latest patents involves methods of forming integrated circuit capacitors that utilize doped hemispherical grain (HSG) electrodes. This innovative approach includes the formation of a lower electrode by creating a conductive layer pattern on a semiconductor substrate. A HSG silicon surface layer of the first conductivity type is then applied to increase the effective surface area of the lower electrode. The HSG silicon surface layer is doped with N-type dopants to minimize the depletion layer size when the capacitor is reverse biased, thereby improving the capacitor's characteristic Cmin/Cmax ratio. Additionally, a diffusion barrier layer, such as silicon nitride, is formed on the lower electrode, followed by a dielectric layer that enhances capacitance due to its high dielectric strength.
Career Highlights
Se-Jin Shim is currently employed at Samsung Electronics Co., Ltd., where he continues to innovate in the field of semiconductor technology. His work has been instrumental in advancing the capabilities of integrated circuits, making them more efficient and reliable for various applications.
Collaborations
Throughout his career, Se-Jin Shim has collaborated with notable colleagues, including Seung-Hwan Lee and Sang-Hyeop Lee. These partnerships have fostered a creative environment that has led to groundbreaking advancements in their field.
Conclusion
Se-Jin Shim's contributions to integrated circuit technology exemplify the spirit of innovation. His patents and collaborative efforts continue to shape the future of electronic devices, making them more efficient and effective.