The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 12, 2001
Filed:
Jan. 26, 1998
Applicant:
Inventors:
Young-sun Kim, Kyungki-do, KR;
Se-jin Shim, Seoul, KR;
Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/120 ;
U.S. Cl.
CPC ...
H01L 2/120 ;
Abstract
A method of forming a hemispherical grained silicon layer includes the steps of providing a microelectronic substrate including a conductive layer thereon, and heating the conductive layer to a first predetermined temperature. Hemispherical grained silicon seeds are formed on the conductive layer while maintaining the conductive layer and the substrate at a second predetermined temperature higher than the first predetermined temperature. The hemispherical grained silicon seeds are annealed at a third predetermined temperature which is lower than the second predetermined temperature thereby growing the seeds to form a hemispherical grained silicon layer on the conductive layer.