Seoul, South Korea

Se Hyoung Ahn

USPTO Granted Patents = 9 

Average Co-Inventor Count = 5.4

ph-index = 2

Forward Citations = 8(Granted Patents)


Company Filing History:


Years Active: 2016-2024

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9 patents (USPTO):Explore Patents

Title: Innovations of Se Hyoung Ahn in Semiconductor Technology

Introduction

Se Hyoung Ahn is a prominent inventor based in Seoul, South Korea. He has made significant contributions to the field of semiconductor technology, holding a total of nine patents. His work focuses on the development of advanced semiconductor devices and methods for their fabrication.

Latest Patents

One of Se Hyoung Ahn's latest patents involves semiconductor devices and methods for fabricating them. The semiconductor device includes a landing pad and a lower electrode that is connected to the landing pad. This lower electrode features an outer portion and an inner portion. The outer portion is divided into first and second regions. Additionally, the semiconductor devices incorporate a dielectric film on the first region of the outer portion on the lower electrode, along with an upper electrode on the dielectric film. Notably, the first region of the outer portion of the lower electrode contains a silicon (Si) dopant, while the dielectric film does not extend along the second region. The concentration of the silicon dopant in the first region differs from that in the second region and is higher than in the inner portion.

Career Highlights

Se Hyoung Ahn is currently employed at Samsung Electronics Co., Ltd., a leading company in the technology sector. His innovative work has positioned him as a key figure in the development of semiconductor technologies.

Collaborations

Some of his notable coworkers include Young-Lim Park and Chang Mu An, who have collaborated with him on various projects within the semiconductor field.

Conclusion

Se Hyoung Ahn's contributions to semiconductor technology through his patents and work at Samsung Electronics Co., Ltd. highlight his importance in the industry. His innovative approaches continue to shape the future of semiconductor devices.

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