The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 15, 2016
Filed:
Apr. 09, 2015
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Inventors:
Jong Bom Seo, Seoul, KR;
Young Geun Park, Suwon-si, KR;
Bong Hyun Kim, Incheon, KR;
Sun Ho Kim, Suwon-si, KR;
Hyun Jun Kim, Seoul, KR;
Se Hyoung Ahn, Seoul, KR;
Chang Mu An, Osan-si, KR;
Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/108 (2006.01); H01L 49/02 (2006.01); B05D 1/00 (2006.01);
U.S. Cl.
CPC ...
H01L 28/90 (2013.01); B05D 1/60 (2013.01); H01L 27/10814 (2013.01); H01L 27/10852 (2013.01);
Abstract
A method of manufacturing a capacitor for a semiconductor device includes forming a lower electrode, forming a dielectric layer on the lower electrode, forming a first upper electrode on the dielectric layer, adsorbing an organic silicon source onto a surface of the first upper electrode, and forming a second upper electrode on the first upper electrode onto which the organic silicon source is adsorbed. Related devices and fabrication methods are also discussed.