Chang Mu An

Title: Chang Mu An: Innovator in Semiconductor Technology

Introduction

Chang Mu An is a prominent inventor based in Osan-si, South Korea. He has made significant contributions to the field of semiconductor technology, holding a total of seven patents. His work focuses on the development of advanced semiconductor devices and methods for their fabrication.

Latest Patents

One of Chang Mu An's latest patents involves semiconductor devices that include a landing pad and a lower electrode connected to the landing pad. This semiconductor device features an outer portion and an inner portion, with the outer portion comprising first and second regions. The design incorporates a dielectric film on the first region of the outer portion on the lower electrode, along with an upper electrode on the dielectric film. Notably, the first region of the outer portion contains a silicon (Si) dopant, while the dielectric film does not extend along the second region. The concentration of the silicon dopant in the first region differs from that in the second region and is higher than in the inner portion.

Career Highlights

Chang Mu An is currently employed at Samsung Electronics Co., Ltd., where he continues to innovate in semiconductor technology. His expertise and contributions have positioned him as a key figure in the industry.

Collaborations

Throughout his career, Chang Mu An has collaborated with notable colleagues, including Se Hyoung Ahn and Young-Lim Park. These collaborations have further enhanced his work and contributions to semiconductor advancements.

Conclusion

Chang Mu An's innovative work in semiconductor technology has led to significant advancements in the field. His patents reflect a deep understanding of semiconductor devices and their fabrication methods. His contributions continue to influence the industry and pave the way for future innovations.