Los Gatos, CA, United States of America

Scott W Barry

USPTO Granted Patents = 4 

Average Co-Inventor Count = 3.7

ph-index = 3

Forward Citations = 27(Granted Patents)


Location History:

  • Los Gatos, GA (US) (2013)
  • Los Gatos, CA (US) (2015 - 2016)

Company Filing History:


Years Active: 2013-2016

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4 patents (USPTO):Explore Patents

Title: Scott W Barry: Innovator in Semiconductor Technology

Introduction

Scott W Barry is a prominent inventor based in Los Gatos, California. He has made significant contributions to the field of semiconductor technology, holding a total of four patents. His work focuses on integrating capacitors within semiconductor devices, which enhances their performance and efficiency.

Latest Patents

One of Scott's latest patents is for a semiconductor device having a capacitor integrated therein. This innovation describes semiconductor devices that include a substrate with a dopant material of a first conductivity type. A plurality of trenches are formed within the substrate, and a diffusion region with dopant material of a second conductivity type is created near the trenches. The capacitor is formed within these trenches and partially over the substrate, consisting of at least a first electrode, a second electrode, and a dielectric material situated between them.

Career Highlights

Scott W Barry is currently employed at Maxim Integrated Products, Inc., where he continues to develop cutting-edge semiconductor technologies. His expertise in this area has led to advancements that are crucial for modern electronic devices.

Collaborations

Scott has collaborated with notable colleagues, including Lei Tian and Xuejun Ying, who share his commitment to innovation in semiconductor technology.

Conclusion

Scott W Barry's contributions to semiconductor technology through his patents and collaborations highlight his role as a key innovator in the field. His work continues to influence the development of advanced electronic devices.

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