The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 24, 2015
Filed:
Dec. 14, 2012
Maxim Integrated Products, Inc., San Jose, CA (US);
Khanh Tran, Milpitas, CA (US);
Joseph P. Ellul, San Jose, CA (US);
Anuranjan Srivastava, Dublin, CA (US);
Kiyoko Ikeuchi, Mountain View, CA (US);
Scott W. Barry, Los Gatos, CA (US);
Maxim Integrated Products, Inc., San Jose, CA (US);
Abstract
Semiconductor devices are described that include a capacitor integrated therein. In an implementation, the semiconductor devices include a substrate including a dopant material of a first conductivity type. A plurality of trenches are formed within the substrate. The semiconductor devices also include a diffusion region having dopant material of a second conductivity type formed proximate to the trenches. A capacitor is formed within the trenches and at least partially over the substrate. The capacitor includes at least a first electrode, a second electrode, and a dielectric material formed between the first and second electrodes.