This inventor holds 1 USPTO granted patent. Top assignees: Leland Stanford Junior University, Raytheon Company, University of California. Active years: 2026.
Company Filing History:
1 out of 5,509 
1 out of 8,313 
1 out of 16,008 
Years Active: 2026
Title: Scott Ueda: Innovator in High-Quality Aluminum Nitride Films
Introduction
Scott Ueda is a notable inventor based in Whittier, California. He has made significant contributions to the field of materials science, particularly in the development of high-quality aluminum nitride films. His work focuses on applications that enhance heat dissipation and spreading, which are crucial for modern electronic devices.
Latest Patents
Ueda holds a patent for the "Low-temperature deposition of high-quality aluminum nitride films for heat spreading applications." This innovative patent provides methods for preparing high-quality metal-nitride films, such as aluminum nitride (AlN), which are essential for heat dissipation in RF devices. The technology enables the deposition of high thermal conductivity layers that can be utilized in power amplifiers and high electron mobility transistors. The inventive concepts presented in his patent can also facilitate the integration of compound semiconductors on silicon devices, addressing the increasing power densities in highly scaled microelectronic devices.
Career Highlights
Throughout his career, Scott Ueda has worked with prestigious institutions, including the University of California and Leland Stanford Junior University. His experience in these academic environments has allowed him to contribute to cutting-edge research and development in semiconductor technology.
Collaborations
Ueda has collaborated with various professionals in his field, including his coworker Aaron McLeod. Their joint efforts have further advanced the understanding and application of aluminum nitride films in electronic devices.
Conclusion
Scott Ueda's innovative work in the field of aluminum nitride films has made a significant impact on heat management in electronic devices. His contributions continue to influence advancements in semiconductor technology and materials science.