The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 17, 2026
Filed:
Feb. 08, 2021
The Regents of the University of California, Oakland, CA (US);
The Board of Trustees of the Leland Stanford Junior University, Stanford, CA (US);
Raytheon Company, Waltham, MA (US);
Scott Ueda, Whittier, CA (US);
Aaron Mcleod, La Jolla, CA (US);
Andrew Kummel, San Diego, CA (US);
Mike Burkland, Tucson, AZ (US);
Eduardo M. Chumbes, Andover, MA (US);
Thomas E. Kazior, Arlington, VA (US);
Eric Pop, Stanford, CA (US);
Michelle Chen, Stanford, CA (US);
Chris Perez, Stanford, CA (US);
Mark Rodwell, Santa Barbara, CA (US);
The Regents of the University of California, Oakland, CA (US);
The Board of Trustees of the Leland Stanford Junior University, Stanford, CA (US);
Raytheon Company, Waltham, MA (US);
Abstract
Provided are high quality metal-nitride, such as aluminum nitride (AlN), films for heat dissipation and heat spreading applications, methods of preparing the same, and deposition of high thermal conductivity heat spreading layers for use in RF devices such as power amplifiers, high electron mobility transistors, etc. Aspects of the inventive concept can be used to enable heterogeneously integrated compound semiconductor on silicon devices or can be used in in non-RF applications as the power densities of these highly scaled microelectronic devices continues to increase.