Scott T Evans

Title: Scott T. Evans: Innovator in Double Data-Rate Memory Devices

Introduction

Scott T. Evans is a distinguished inventor based in Ft. Collins, Colorado, recognized for his significant contributions to the field of memory device interfaces. With a remarkable portfolio of 8 patents, Evans has made his mark by innovating technologies that optimize data communication in memory devices.

Latest Patents

Among his recent patents is the innovation titled "Continuous tuning of preamble release timing in a double data-rate memory device interface". This invention focuses on preamble release training in a DDR dynamic random access memory interface, utilizing feedback from read operations to refine preamble release signal timings. The patent describes a systematic approach where a series of signals generated in response to read operations helps adjust the preamble release, ensuring it's activated precisely when needed. The invention also highlights the role of an adjustable delay circuit which adapts based on the comparative results of incoming data signals.

Another key patent, "Interfaces, circuits, and methods for communicating with a double data rate memory device", details an advanced input/output interface that enhances data reading and writing processes for DDR memory. This patent encompasses components such as strobe and data circuits, preamble logic, and synchronizers, all designed to improve data handling efficiency. The operation of the strobe park circuit, which manages signal replacement when not reading data, exemplifies Evans’s innovative approach to memory device operations.

Career Highlights

Throughout his career, Scott Evans has worked with esteemed companies in the technology sector, including Agilent Technologies, Inc. and Avago Technologies General IP (Singapore) Pte. Ltd. His experience in these organizations has been pivotal in shaping his expertise in memory device interfaces and contributing to his success as an inventor.

Collaborations

Evans has collaborated with notable peers, including Manuel Salcido and Gilbert Yoh. These collaborations have likely contributed to the depth of his innovative work, fostering an exchange of ideas that push the boundaries of technology in memory devices.

Conclusion

Scott T. Evans stands out as a prominent inventor whose patents reflect his commitment to improving data communication technologies in memory devices. His contributions, particularly in optimizing double data-rate memory device interfaces, showcase his foresight and ingenuity in engineering. As technology continues to evolve, the impact of his innovations is sure to resonate within the industry for years to come.