Company Filing History:
Years Active: 2005-2008
Title: Scott R Chegwidden: Innovator in EUV Lithography
Introduction
Scott R Chegwidden is a prominent inventor based in Mountain View, CA (US). He has made significant contributions to the field of extreme ultraviolet (EUV) lithography, holding a total of 2 patents. His work focuses on developing advanced mask absorber structures that enhance the performance of EUV lithography processes.
Latest Patents
Chegwidden's latest patents include innovative designs aimed at improving the efficiency and effectiveness of EUV lithography. One of his notable patents is the "Dual-layer EUV mask absorber with trenches having opposing sidewalls that are straight and parallel." This invention addresses the structural and processing requirements of EUV lithography by combining a first mask absorber layer that is anisotropically etched with minimal etch bias at a relatively fast etch rate, with a highly-selective second mask absorber layer. This combination results in a mask absorber with desirable hybrid performance properties. Another significant patent is the "Double-metal EUV mask absorber," which similarly focuses on enhancing the structural and processing capabilities of EUV lithography through a composite mask absorber structure.
Career Highlights
Scott R Chegwidden is currently employed at Intel Corporation, where he continues to push the boundaries of innovation in semiconductor technology. His work at Intel has positioned him as a key player in the advancement of EUV lithography techniques.
Collaborations
Chegwidden has collaborated with notable colleagues, including Pei-yang Yan and Hsing-Chien Ma, to further enhance the research and development of EUV technologies.
Conclusion
Scott R Chegwidden's contributions to EUV lithography through his patents and work at Intel Corporation highlight his role as a leading inventor in the field. His innovative approaches continue to shape the future of semiconductor manufacturing.