The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 05, 2005
Filed:
Dec. 28, 2002
Applicants:
Pei-yang Yan, Saratoga, CA (US);
Hsing-chien MA, Fremont, CA (US);
Scott R. Chegwidden, Mountain View, CA (US);
Inventors:
Pei-Yang Yan, Saratoga, CA (US);
Hsing-Chien Ma, Fremont, CA (US);
Scott R. Chegwidden, Mountain View, CA (US);
Assignee:
Intel Corporation, Santa Clara, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B29D011/00 ; B44C001/22 ;
U.S. Cl.
CPC ...
Abstract
A composite extreme ultraviolet light (EUV) mask absorber structure and method are disclosed to address the structural and processing requirements of EUV lithography. A first mask absorber layer anisotropically etched with minimal etch bias at a relatively fast etch rate, is combined with a highly-selective second mask absorber layer, to produce a mask absorber with desirable hybrid performance properties.