Scott O Graham

Title: Scott O. Graham: Innovator in Bipolar Integrated Circuits

Introduction

Scott O. Graham is a notable inventor based in Cupertino, California. He has made significant contributions to the field of integrated circuits, particularly in the area of bipolar transistors. His innovative work has led to the development of a patent that enhances the functionality and reliability of these electronic components.

Latest Patents

Scott O. Graham holds a patent for "Isolation and substrate connection for a bipolar integrated circuit." This invention presents a structure for isolating a bipolar transistor from an adjacent transistor. It includes a first silicon dioxide isolation region that laterally surrounds the transistor and a conductive channel stop region that surrounds the silicon dioxide isolation region. The channel stop region allows for the control of the electrical potential of the substrate, while the silicon dioxide isolation region prevents contact between the channel stop and the transistor. This innovation is crucial for improving the performance of bipolar integrated circuits.

Career Highlights

Scott O. Graham is associated with Monolithic Memories, Inc., where he has contributed to various projects and advancements in semiconductor technology. His expertise in bipolar integrated circuits has positioned him as a valuable asset in the field of electronics.

Collaborations

Throughout his career, Scott has worked alongside talented individuals such as Lawrence Y. Lin and Hua T. Chua. These collaborations have fostered an environment of innovation and have led to the successful development of new technologies.

Conclusion

Scott O. Graham's contributions to the field of bipolar integrated circuits exemplify the spirit of innovation. His patent and work at Monolithic Memories, Inc. highlight his commitment to advancing technology in the semiconductor industry.