The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 26, 1988
Filed:
Sep. 25, 1985
Applicant:
Inventors:
Scott O Graham, Cupertino, CA (US);
Lawrence Y Lin, Cupertino, CA (US);
Hua T Chua, Los Altos Hills, CA (US);
Assignee:
Monolithic Memories, Inc., Santa Clara, CA (US);
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
437 33 ; 437 31 ; 437 63 ; 357 34 ; 357 50 ;
Abstract
A structure for isolating a bipolar transistor (100) from an adjacent transistor includes a first silicon dioxide isolation region (110) laterally surrounding the transistor and a conductive channel stop region (112) laterally surrounding the silicon dioxide isolation region. The channel stop region allows electrical potential of the substrate (102) to be controlled and the silicon dioxide isolation region prevents the channel stop from contacting the transistor.