Company Filing History:
Years Active: 2001-2007
Title: Scott A Smith: Innovator in Gallium Nitride Semiconductor Technology
Introduction
Scott A Smith is a notable inventor based in Centerville, OH (US). He has made significant contributions to the field of semiconductor technology, particularly in the fabrication of gallium nitride layers. With a total of 3 patents to his name, Smith's work has implications for the development of microelectronic devices.
Latest Patents
Smith's latest patents include innovative methods for fabricating gallium nitride semiconductor layers. One of his patents describes methods of fabricating gallium nitride semiconductor layers by lateral growth into trenches. This technique allows for the formation of a lateral gallium nitride semiconductor layer, which is relatively defect-free as dislocation defects do not significantly propagate laterally. Another patent focuses on second gallium nitride layers that extend into trenches in first gallium nitride layers, further enhancing the quality and performance of microelectronic devices.
Career Highlights
Scott A Smith is currently affiliated with North Carolina State University, where he continues to advance research in semiconductor technology. His work has garnered attention for its potential to improve the efficiency and reliability of microelectronic devices.
Collaborations
Smith collaborates with esteemed colleagues, including Tsvetanka Zheleva and Darren B Thomson, who contribute to his research endeavors.
Conclusion
Scott A Smith's innovative work in gallium nitride semiconductor technology positions him as a key figure in the field. His patents reflect a commitment to advancing microelectronic device fabrication, paving the way for future technological advancements.