The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 27, 2007
Filed:
Aug. 10, 2004
Tsvetanka Zheleva, Chapel Hill, NC (US);
Darren B. Thomson, Cary, NC (US);
Scott A. Smith, Centerville, OH (US);
Kevin J. Linthicum, Angier, NC (US);
Thomas Gehrke, Carrboro, NC (US);
Robert F. Davis, Raleigh, NC (US);
Tsvetanka Zheleva, Chapel Hill, NC (US);
Darren B. Thomson, Cary, NC (US);
Scott A. Smith, Centerville, OH (US);
Kevin J. Linthicum, Angier, NC (US);
Thomas Gehrke, Carrboro, NC (US);
Robert F. Davis, Raleigh, NC (US);
North Carolina State University, Raleigh, NC (US);
Abstract
A gallium nitride layer is laterally grown into a trench in the gallium nitride layer, to thereby form a lateral gallium nitride semiconductor layer. At least one microelectronic device may then be formed in the lateral gallium nitride semiconductor layer. Dislocation defects do not significantly propagate laterally into the lateral gallium nitride semiconductor layer, so that the lateral gallium nitride semiconductor layer is relatively defect free.