Company Filing History:
Years Active: 2021
Title: Sayan Saha: Innovator in Field-Effect Transistor Technology
Introduction
Sayan Saha is a notable inventor based in Portland, Oregon. He has made significant contributions to the field of semiconductor technology, particularly in the development of field-effect transistors.
Latest Patents
Sayan holds a patent for "Field-effect transistors with dual thickness gate dielectrics." This innovative patent discloses transistor arrangements that include a semiconductor channel material, a source region, and a drain region. The gate stack in this arrangement features a thinner gate dielectric closer to the source region and a thicker gate dielectric nearer to the drain region. This design effectively realizes tunable ballast resistance integrated with the transistor arrangement, which may help increase the breakdown voltage and decrease gate leakage.
Career Highlights
Sayan Saha is currently employed at Intel Corporation, where he continues to push the boundaries of semiconductor technology. His work has been instrumental in advancing the performance and efficiency of field-effect transistors.
Collaborations
Sayan collaborates with talented individuals such as Ayan Kar and Kalyan C Kolluru, contributing to a dynamic and innovative work environment.
Conclusion
Sayan Saha's contributions to the field of field-effect transistors exemplify his commitment to innovation and excellence in semiconductor technology. His work at Intel Corporation and his patent on dual thickness gate dielectrics highlight his role as a leading inventor in this critical area of research.
Inventor’s Patent Attorneys refers to legal professionals with specialized expertise in representing inventors throughout the patent process. These attorneys assist inventors in navigating the complexities of patent law, including filing patent applications, conducting patent searches, and protecting intellectual property rights. They play a crucial role in helping inventors secure patents for their innovative creations.