Location History:
- Uttar Pradesh, IN (2021)
- Greater Noida, IN (2023)
Company Filing History:
Years Active: 2021-2023
Title: Saurabh Porwal: Innovator in SRAM Technology
Introduction
Saurabh Porwal is a notable inventor based in Uttar Pradesh, India. He has made significant contributions to the field of static random access memory (SRAM) technology. With a total of 2 patents, his work focuses on enhancing the performance and efficiency of memory systems.
Latest Patents
Saurabh's latest patents include innovative solutions aimed at improving SRAM functionality. The first patent, titled "Temperature tracked dynamic keeper implementation to enable read operations," describes a SRAM system that incorporates a dynamic keeper. This system features a first keeper for read operations at a specific temperature range and a second keeper for another range, utilizing a temperature-sensitive control circuit to select the appropriate keeper based on temperature.
The second patent, "Enhanced read sensing margin and minimized VDD for SRAM cell arrays," presents a structure for an integrated circuit designed to store data efficiently. This integrated circuit includes a memory cell array configured in an SRAM architecture. It enhances the read sensing margin by employing a wordline that drives two transistors, thereby reducing data-dependent current leakage from the read bitline. Additionally, a weak NMOS keeper configuration is introduced to compensate for current leakage, ensuring reliable operation.
Career Highlights
Saurabh Porwal is currently employed at Synopsys, Inc., where he continues to develop innovative solutions in the field of memory technology. His expertise and contributions have positioned him as a valuable asset in the industry.
Collaborations
Saurabh has collaborated with several talented individuals, including Sudhir Kumar and M Sultan M Siddiqui. These collaborations have further enriched his work and contributed to advancements in SRAM technology.
Conclusion
Saurabh Porwal's innovative patents and contributions to SRAM technology highlight his role as a leading inventor in the field. His work not only enhances memory performance but also paves the way for future advancements in integrated circuit design.